DS2016
TIMING DIAGRAM: DATA RETENTION - POWER-UP, POWER-DOWN Figure 1
SEE NOTE 8
NOTES:
1) WE is high for read cycles.
2) OE = V IH or V IL . If OE = V IH during write cycle, the output buffers remain in a high impedance state.
3) t WP is specified as the logical AND of CE and WE . t WP is measured from the latter of CE or WE
going low to the earlier of CE or WE going high.
4) t DH and t DS are measured from the earlier of CE or WE going high.
5) If the CE low transition occurs simultaneously with or later than the WE low transition, the output
buffers remain in a high impedance state.
6) If the CE high transition occurs prior to or simultaneously with the WE high transition, the output
buffers remain in a high impedance state.
7) If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition,
the output buffers remain in a high impedance state.
8) If the V IH level of CE is 2.0V during the period that V CC voltage is going down from 4.5V to 2.7V,
I CCS1 current flows.
9) The DS2016 maintains full operation from 5.5V to 2.7V. The electrical characteristics tables show
two tested and guaranteed points of operation. For operation between 4.5V and 3.5V, use the
composite worst case characteristics from both 5V and 3V operation for design purposes.
DC TEST CONDITIONS
Outputs Open
All voltages are referenced to ground.
AC TEST CONDITIONS
Output Load: 100pF + 1TTL Gate
Input Pulse Levels: 0V - 3.0V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input Pulse Rise and Fall Times: 5ns
7 of 8
相关PDF资料
DS2030L-100# IC NVSRAM 256KBIT 100NS 256BGA
DS2030W-100# IC NVSRAM 256KBIT 100NS 256BGA
DS2030Y-70# IC NVSRAM 256KBIT 70NS 256BGA
DS2045L-100# IC NVSRAM 1MBIT 100NS 256BGA
DS2045W-100# IC NVSRAM 1MBIT 100NS 256BGA
DS2045Y-70# IC NVSRAM 1MBIT 70NS 256BGA
DS2050W-100# IC NVSRAM 4MBIT 100NS 256BGA
DS2065W-100# IC NVSRAM 8MBIT 100NS 256BGA
相关代理商/技术参数
DS2016R-150 功能描述:静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray
DS2016R-150+ 功能描述:静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray
DS2016S-100 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:IC-SM-16K CMOS SRAM
DS201B10A10 制造商:ABB Low Voltage Products and Systems 功能描述:System Pro M RCBO DS201 B10 A10
DS201B10A30 制造商:ABB Low Voltage Products and Systems 功能描述:System Pro M RCBO DS201 B10 A30
DS201B10A300 制造商:ABB Control 功能描述:System Pro M RCBO DS201 B10 A300
DS201B10AC100 制造商:ABB Control 功能描述:System Pro M RCBO DS201 B10 AC100
DS201B10AC300 制造商:ABB Control 功能描述:System Pro M RCBO DS201 B10 AC300